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A detailed study of tungsten low‐pressure etching in a helicon source reactor was performed. In correlation with surface analyses (transmission electronic

Inference of vibrational anharmonicity in hot SF6: An

In an investigation of gaseous SF6 at temperatures ranging from 298 to almost 1000 K, the observed thermal expansion of the mean bond length as a

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On the interface modeling of Li-SF6 wick combustion

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Tungsten etching in low‐pressure SF6 plasma: Influence of

The influence of the surface temperature on tungstenetching in a SF6plasma diffusing from a helicon source has been studied in detail. The surface

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Phase transition in the dioxygenyl salt O+2AsF6

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Heat transfer in the orientationally disordered phase of SF6

The isobaric thermal conductivity of solid SF 6 is investigated in the high-temperature phase. The experimental results are rescaled to a constant density

on the GIS Partial Discharge Detection Technology and SF6

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several gases (He, N2, N2O, and SF6) on gas trapping in

Shopping cart Sign in HelpPurchase Help Direct export Export file The effects of several gases (He, N2, N20, and SF6) on gas trapping

Browse Advance Search Prepaid&Cart Login│ SignSF6 abated at 1800 K and 1600 K, respectively,Edwards Exhaust Management System, Nailsea, UK (

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Subscriptions For Editors eBooks Log In My Cart Advanced Search However, experience shows that SF6 gas medium has many disadvantages under

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Behavior of inhomogeneous high-temperature SF6 gas in a gas

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and temperature effects on motional dynamics of SF6 in the

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Dissociative and double photoionization of SF6 in the 75–125

Partial cross sections for the singly charged fragments [SF m +(m = 0–5)] and F+ and the doubly charged fragments [SF n 2+(n = 0–4)] in

CO2 laser absorption in SF6-air boundary layers

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Single hot spot discharge in SF6 gas and in the mixture SF6/

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CROSS SATURATION OF 10.6‐μ SIGNALS IN SF6

Measurements of the nonlinear interaction in SF6 of two linearly polarized CO2 laser signals as a function of the angle between the two planes of

Deposited Wafer after Reactive Ion Etching Using SF6+Argon

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